Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructures

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3406136

Title:	Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructures
Authors:	Wang, S.J. Miao, S. Reaney, I.M. Lai, M.O. Lu, L.
Issue Date:	15-May-2010
Citation:	Wang, S.J., Miao, S., Reaney, I.M., Lai, M.O., Lu, L. (2010-05-15). Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructures. Journal of Applied Physics 107 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3406136
Abstract:	Polycrystalline Ba (Ti0.85Sn0.15)O 3/Bi1.5Zn1.0Nb1.5O7 (BTS/BZN) heterostructure thin films were deposited on LaNiO3 / SiO2 /Si substrates by pulsed laser deposition. The leakage mechanisms of the BTS/BZN heterostructure thin films were studied in the temperature range from 303 to 403 K. At a high electric field (>100 kV/cm) and a positive bias, the leakage is dominated by space-charge-limited-current, while Fowler-Nordheim tunneling is the main reason for conduction under a negative bias. At a low electric field, the leakage current is controlled by the Ohmic contact. © 2010 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/85347
ISSN:	00218979
DOI:	10.1063/1.3406136
Appears in Collections:	Staff Publications

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