Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2009.03.020
Title: Influence of electrochemical treatment of ITO surface on nucleation and growth of OLED hole transport layer
Authors: Huang, Z.H.
Zeng, X.T.
Sun, X.Y.
Kang, E.T. 
Fuh, J.Y.H. 
Lu, L. 
Keywords: AFM
ITO
Morphology
OLEDs
Surface energy
Surface treatment
Issue Date: 1-Jul-2009
Citation: Huang, Z.H., Zeng, X.T., Sun, X.Y., Kang, E.T., Fuh, J.Y.H., Lu, L. (2009-07-01). Influence of electrochemical treatment of ITO surface on nucleation and growth of OLED hole transport layer. Thin Solid Films 517 (17) : 4810-4813. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2009.03.020
Abstract: Indium-tin-oxide (ITO) surfaces were electrochemically treated with voltages from 0 to + 2.8 V in 0.1 M K4P2O7 electrolyte. The initial growth mode of hole transport layer (HTL) was investigated by atomic force microscope (AFM) observation of thermally deposited 2 nm N,N-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) on the electrochemically treated ITO surfaces. The results showed that the morphology of NPB thin film was significantly influenced by the treating voltage via the change in surface energy, especially the polar component. The treatments with + 2.0 and + 2.4 V were found to be most effective for more uniform and denser nucleation of NPB. The influence of the electrochemical treatments on the nucleation and growth mode of HTL and therefore the device performance were discussed. © 2009 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/85314
ISSN: 00406090
DOI: 10.1016/j.tsf.2009.03.020
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Sep 11, 2018

WEB OF SCIENCETM
Citations

5
checked on Sep 11, 2018

Page view(s)

34
checked on Jun 29, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.