Please use this identifier to cite or link to this item:
Title: Growth and properties of (001)-oriented Pb(Zr0.52Ti 0.48)O3/ LaNiO3 films on Si(001) substrates with TiN buffer layers
Authors: Zhu, T.J. 
Lu, L. 
Thompson, C.V.
Keywords: A1. physical vapor deposition processes
B1. perovskites
B2. ferro-electric materials
Issue Date: 17-Dec-2004
Source: Zhu, T.J., Lu, L., Thompson, C.V. (2004-12-17). Growth and properties of (001)-oriented Pb(Zr0.52Ti 0.48)O3/ LaNiO3 films on Si(001) substrates with TiN buffer layers. Journal of Crystal Growth 273 (1-2) : 172-178. ScholarBank@NUS Repository.
Abstract: Pulsed laser deposition has been used to grow Pb(Zr0.52Ti 0.48)O3 (PZT)/LaNiO3 (LNO) bilayer thin films on bare Si(00 1) and SiO2-coated Si(00 1) substrates coated with TiN buffer layers. The effect of background gas pressure on the crystallographic texture of the polycrystalline thin films has been investigated in detail. XRD analysis shows that under optimized conditions, (0 01)-oriented PZT/LNO/TiN heterostructures can be grown on both Si(0 0 1) and SiO2/Si substrates. SIMS measurement indicates that there is no inter-diffusion or chemical reaction at PZT/LNO interface, while La and Ni can inward diffuse into the TiN layers. The (001)-textured PZT films have remnant polarizations as high as 23μC/cm2 and low coercive fields. Up to 1010 polarization switching cycles have been achieved in these PZT films. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.08.011
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 27, 2018


checked on Feb 14, 2018

Page view(s)

checked on Mar 12, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.