Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.jcrysgro.2006.03.027
Title: | Epitaxial growth and ferroelectric properties of Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures on exact SrTiO3(0 0 1) substrates | Authors: | Zhu, T.J. Lu, L. Zhao, X.B. Ji, Z.G. Ma, J. |
Keywords: | A3. Laser epitaxy B1. Perovskites B2. Ferroelectric materials |
Issue Date: | 1-Jun-2006 | Citation: | Zhu, T.J., Lu, L., Zhao, X.B., Ji, Z.G., Ma, J. (2006-06-01). Epitaxial growth and ferroelectric properties of Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures on exact SrTiO3(0 0 1) substrates. Journal of Crystal Growth 291 (2) : 385-389. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.03.027 | Abstract: | High quality Pb(Zr0.52Ti0.48)O3/SrRuO3 (PZT/SRO) perovskite oxide heterostructures have been grown on polished as-received (0 0 1) SrTiO3 substrates without any further treatment by pulsed laser deposition. X-ray diffraction θ-2θ and ω scans showed that the heterostructures had good (0 0 l) out-of-plane orientation and crystalline quality with the full-width at half-maximum values of rocking curves of only 0.04° and 0.2° for the SRO and PZT films, respectively. Transmission electron microscopy observation confirmed the epitaxial nature of the heterostructures. The SRO films showed a periodic step-terrace topography structure with an atomically flat surface, indicating step-flow growth mode, while the PZT films grew by island growth mechanism. The polarization-electric field hysteresis measurement showed that the remnant polarization Pr and the coercive field Ec at 5 V were 42 μC/cm2 and 135 kV/cm, respectively. © 2006 Elsevier B.V. All rights reserved. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/85161 | ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2006.03.027 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.