Please use this identifier to cite or link to this item: https://doi.org/10.1504/IJNT.2014.059833
Title: Effect of trap depth and interfacial energy barrier on charge transport in inverted organic solar cells employing nanostructured ZnO as electron buffer layer
Authors: Elumalai, N.K.
Vijila, C.
Jose, R.
Jie, Z.
Ramakrishna, S. 
Keywords: Charge transport
Electron selective layer
Solution processed
Temperature dependence
Trap depth
Zinc oxide
Issue Date: 2014
Citation: Elumalai, N.K., Vijila, C., Jose, R., Jie, Z., Ramakrishna, S. (2014). Effect of trap depth and interfacial energy barrier on charge transport in inverted organic solar cells employing nanostructured ZnO as electron buffer layer. International Journal of Nanotechnology 11 (1-4) : 322-332. ScholarBank@NUS Repository. https://doi.org/10.1504/IJNT.2014.059833
Abstract: Inverted organic solar cells with device structure ITO/ZnO/poly (3-hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM)/ MoO3/Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. Furthermore, the distribution of localised energy states or trap depth and the ohmicity of the contacts in the optimised device were evaluated, using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth distribution on the charge transport, device performance, and stability of the contacts. Copyright © 2014 Inderscience Enterprises Ltd.
Source Title: International Journal of Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/85069
ISSN: 14757435
DOI: 10.1504/IJNT.2014.059833
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