Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2013.2278662
Title: Direct laser doping of poly-silicon thin films via laser chemical processing
Authors: Virasawmy, S. 
Palina, N.
Widenborg, P.I. 
Kumar, A.
Dalapati, G.K.
Tan, H.R.
Tay, A.A.O. 
Hoex, B. 
Keywords: Laser chemical processing (LCP)
laser doping
Nd:YAG
poly-silicon thin film
Issue Date: 2013
Citation: Virasawmy, S., Palina, N., Widenborg, P.I., Kumar, A., Dalapati, G.K., Tan, H.R., Tay, A.A.O., Hoex, B. (2013). Direct laser doping of poly-silicon thin films via laser chemical processing. IEEE Journal of Photovoltaics 3 (4) : 1259-1264. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2278662
Abstract: Laser chemical processing (LCP) is an attractive doping technique for thin films due to its process simplicity, high achievable doping concentrations, and relatively shallow doping depths. During LCP processing, an infinite supply of dopants is available from the pressurized doping medium. In this paper, LCP is employed for n-type doping of poly-silicon thin films on glass. We achieved a peak doping concentration of 6 × 1018 to 1 × 10 19 cm-3 and a junction depth up to 350 nm, as determined by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. We evaluate the structural quality of the LCP-doped layers with cross-sectional transmission electron microscopy (XTEM), as well as ultraviolet reflectance measurements. The LCP-doped regions are of suitable material quality for device fabrication. The resulting sheet resistance and doping levels are promising for a back surface field for poly-silicon thin-film solar cells on glass (e.g., an n+/n-/p+/glass layer structure in superstrate configuration). © 2011-2012 IEEE.
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/85011
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2013.2278662
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