Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.surfcoat.2004.10.093
Title: Analysis of highly doping with boron from spin-on diffusing source
Authors: Iliescu, C.
Carp, M.
Miao, J.
Tay, F.E.H. 
Poenar, D.P.
Keywords: Highly boron doping
Roughness
Spin-on diffusant
Stress
Issue Date: 1-Aug-2005
Citation: Iliescu, C., Carp, M., Miao, J., Tay, F.E.H., Poenar, D.P. (2005-08-01). Analysis of highly doping with boron from spin-on diffusing source. Surface and Coatings Technology 198 (1-3 SPEC. ISS.) : 309-313. ScholarBank@NUS Repository. https://doi.org/10.1016/j.surfcoat.2004.10.093
Abstract: A large number of MEMS devices require thin diaphragms or cantilevers fabricated using bulk or surface micromachining. This paper presents a characterization of heavily doped p++ layers (well known as efficient etch-stop layers for anisotropic etching of Si in alkaline solution) processed using spin-on diffusants (SOD) sources. The doping profiles were simulated using TSUPREM4 and measured using SIMS. The stress induced in such layers - As resulted from our process - Was 25...40 MPa (tensile). The surface roughness was also investigated, and the measured average value Ra=30 nm (achieved after a diffusion of 5 h at 1150 °C) can be associated with the effect of the oxidation that took place simultaneously with the diffusion process. The paper presents the advantages and disadvantages offered by spin-on doping sources for diffusing heavily doped p++ layers.
Source Title: Surface and Coatings Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84873
ISSN: 02578972
DOI: 10.1016/j.surfcoat.2004.10.093
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