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|Title:||Analysis of highly doping with boron from spin-on diffusing source|
|Keywords:||Highly boron doping|
|Citation:||Iliescu, C., Carp, M., Miao, J., Tay, F.E.H., Poenar, D.P. (2005-08-01). Analysis of highly doping with boron from spin-on diffusing source. Surface and Coatings Technology 198 (1-3 SPEC. ISS.) : 309-313. ScholarBank@NUS Repository. https://doi.org/10.1016/j.surfcoat.2004.10.093|
|Abstract:||A large number of MEMS devices require thin diaphragms or cantilevers fabricated using bulk or surface micromachining. This paper presents a characterization of heavily doped p++ layers (well known as efficient etch-stop layers for anisotropic etching of Si in alkaline solution) processed using spin-on diffusants (SOD) sources. The doping profiles were simulated using TSUPREM4 and measured using SIMS. The stress induced in such layers - As resulted from our process - Was 25...40 MPa (tensile). The surface roughness was also investigated, and the measured average value Ra=30 nm (achieved after a diffusion of 5 h at 1150 °C) can be associated with the effect of the oxidation that took place simultaneously with the diffusion process. The paper presents the advantages and disadvantages offered by spin-on doping sources for diffusing heavily doped p++ layers.|
|Source Title:||Surface and Coatings Technology|
|Appears in Collections:||Staff Publications|
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