Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812143
Title: Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
Authors: Yu, H.Y. 
Lim, H.F. 
Chen, J.H. 
Li, M.F. 
Zhu, C. 
Tung, C.H.
Du, A.Y.
Wang, W.D.
Chi, D.Z.
Kwong, D.-L.
Keywords: HfN
Metal gate
Midgap work function
MOSFET's
TaN
Issue Date: Apr-2003
Citation: Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L. (2003-04). Physical and electrical characteristics of HfN gate electrode for advanced MOS devices. IEEE Electron Device Letters 24 (4) : 230-232. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812143
Abstract: In this letter, the physical and electrical properties of physical vapor deposited (PVD) hafnium nitride (HfN) is studied for the first time as the metal gate electrode for advanced MOS devices applications. It is found that HfN possesses a midgap work function in tantalum nitride (TaN)/HfN/SiO2/Si MOS structures. TaN/HfN stacked metal-gated MOS capacitors exhibit negligible variations on equivalent oxide thickness (EOT), leakage current, and work function upon high-temperature treatments (up to 1000°C), demonstrating the excellent thermal stability of HfN metal gate on SiO2. Our results suggest that HfN metal electrode is an ideal candidate for the fully depleted SOI and/or symmetric double gate MOS devices application.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/84420
ISSN: 07413106
DOI: 10.1109/LED.2003.812143
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