Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.814024
Title: Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
Authors: Kim, S.J. 
Cho, B.J. 
Li, M.-F. 
Zhu, C. 
Chin, A.
Kwong, D.-L.
Keywords: Capacitance density
Co-sputtering
HfO2
Lanthanide
Metal-insulator-metal (MIM) capacitor
Voltage coefficient of capacitor (VCC)
Issue Date: Jul-2003
Citation: Kim, S.J., Cho, B.J., Li, M.-F., Zhu, C., Chin, A., Kwong, D.-L. (2003-07). Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors. IEEE Electron Device Letters 24 (7) : 442-444. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.814024
Abstract: A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/84412
ISSN: 07413106
DOI: 10.1109/LED.2003.814024
Appears in Collections:Staff Publications

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