Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.814011
Title: High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
Authors: Ang, D.S.
Phua, T.W.H.
Liao, H.
Ling, C.H. 
Keywords: Charge pumping current
High-energy tail
Hot-carrier stress
Interface states
N-MOSFET
Issue Date: Jul-2003
Citation: Ang, D.S., Phua, T.W.H., Liao, H., Ling, C.H. (2003-07). High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET. IEEE Electron Device Letters 24 (7) : 469-471. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.814011
Abstract: Experimental evidence, based on sensitively modulating the concentration of the high-energy tail of the electron energy distribution, reveals an important trend in the mid-to-high gate stress voltage (Vg) regime, where device degradation is seen to continuously increase with the applied Vg, for a given drain stress voltage Vd. The shift in the worst-case degradation point from Vg ≈ Vd/2 to Vg = Vd, depicting an uncorrelated behavior with the substrate current, is caused by the injection of the high-energy tail electrons into the gate oxide, when the oxide field near the drain region becomes increasingly favorable as Vg approaches Vd. This letter offers an improved framework for understanding the worst-case hot-carrier stress degradation of deep submicrometer N-MOSFETs under low bias condition.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/84411
ISSN: 07413106
DOI: 10.1109/LED.2003.814011
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