Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.827643
Title: Fermi pinning-induced thermal instability of metal-gate work functions
Authors: Yu, H.Y. 
Ren, C.
Yeo, Y.-C. 
Kang, J.F. 
Wang, X.P.
Ma, H.H.H. 
Li, M.-F. 
Chan, D.S.H. 
Kwong, D.-L.
Keywords: Extrinsic states
Fermi pinning
Metal gate
Thermal stability
Work function
Issue Date: May-2004
Citation: Yu, H.Y., Ren, C., Yeo, Y.-C., Kang, J.F., Wang, X.P., Ma, H.H.H., Li, M.-F., Chan, D.S.H., Kwong, D.-L. (2004-05). Fermi pinning-induced thermal instability of metal-gate work functions. IEEE Electron Device Letters 25 (5) : 337-339. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.827643
Abstract: The dependence of the metal-gate work function on the annealing temperature is experimentally studied. We observe increased Fermi-level pinning of the metal-gate work function with increased annealing temperature. This effect is more significant for SiO2 than for HfO2 gate dielectric. A metal-dielectric interface model that takes the role of extrinsic states into account is proposed to explain the work function thermal instability. This letter provides new understanding on work function control for metal-gate transistors and on metal-dielectric interfaces.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/84406
ISSN: 07413106
DOI: 10.1109/LED.2004.827643
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

130
checked on Jul 11, 2018

WEB OF SCIENCETM
Citations

99
checked on Jun 25, 2018

Page view(s)

34
checked on May 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.