Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2168511
Title: Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
Authors: Song, T.L.
Chua, S.J. 
Fitzgerald, E.A.
Issue Date: 1-Feb-2006
Citation: Song, T.L., Chua, S.J., Fitzgerald, E.A. (2006-02-01). Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906)). Journal of Applied Physics 99 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168511
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/84403
ISSN: 00218979
DOI: 10.1063/1.2168511
Appears in Collections:Staff Publications

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