Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2168511

Title:	Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
Authors:	Song, T.L. Chua, S.J. Fitzgerald, E.A.
Issue Date:	1-Feb-2006
Citation:	Song, T.L., Chua, S.J., Fitzgerald, E.A. (2006-02-01). Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906)). Journal of Applied Physics 99 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168511
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/84403
ISSN:	00218979
DOI:	10.1063/1.2168511
Appears in Collections:	Staff Publications

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