Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.815942
Title: A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET
Authors: Ang, D.S.
Ling, C.H. 
Keywords: Charge pumping (CP) current
Hot-carrier stress
Interface state
MOSFET
Neutral electron trap
Issue Date: Sep-2003
Source: Ang, D.S., Ling, C.H. (2003-09). A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET. IEEE Electron Device Letters 24 (9) : 598-600. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.815942
Abstract: In deep submicrometer N-MOSFET, a "backdrop" of substantial defect generation by the quasi-static Vg = Vd stress phase is shown to significantly influence the accuracy of interpretation of ac stress data. If neglected, a severe overestimation of ac stress induced degradation would result. Through an approach that eliminates this damage component from the overall ac stress damage, increased parametric shifts, associated with the gate pulse transition phase, are found to occur in different time windows, delineated by the relative importance of hot-hole and hot-electron induced damage at different stages of the stress, the interaction between the two damages at specific stages of the stress, as well as the sensitivities of the device parameters to the spatial evolution of the two damages.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/84385
ISSN: 07413106
DOI: 10.1109/LED.2003.815942
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