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Title: Work function tuning of metal nitride electrodes for advanced CMOS devices
Authors: Ren, C.
Faizhal, B.B.
Chan, D.S.H. 
Li, M.-F. 
Yeo, Y.-C. 
Trigg, A.D.
Balasubramanian, N.
Kwong, D.-L.
Keywords: Lanthanide
Metal gate electrode
Metal nitride
Work function tuning
Issue Date: 10-May-2006
Citation: Ren, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L. (2006-05-10). Work function tuning of metal nitride electrodes for advanced CMOS devices. Thin Solid Films 504 (1-2) : 174-177. ScholarBank@NUS Repository.
Abstract: A novel method for tuning the work function of metal nitride (MN x) metal gates by incorporating lanthanide elements into MN x is demonstrated for application in nMOSFETs. The work function (ΦM) of MNx metal gates, such as TaN and HfN, can be tuned continuously down to 4.2-4.3 eV even after rapid thermal annealing (RTA) up to 1000 °C by incorporating lanthanide elements, such as terbium (Tb), erbium (Er), or ytterbium (Yb), into MNx gates. In addition, the lanthanide-MNx metal gates exhibit good thermal stability on both SiO2 and HfAlO high-κ dielectrics in terms of equivalent oxide thickness (EOT) and leakage current, making them promising metal gate candidates in the conventional self-align bulk-Si CMOS process flow. The effect of N in lanthanide-MNx is also studied and the results show that the enhanced nitrogen content in lanthanide-MNx could be of importance for the thermal stability as well as other properties of MNx. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.081
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