Please use this identifier to cite or link to this item: https://doi.org/10.1557/opl.2012.1663
Title: Wafer-scale, highly-ordered silicon nanowires produced by step-and-flash imprint lithography and metal-assisted chemical etching
Authors: Ho, J.-W.
Wee, Q.
Dumond, J.
Zhang, L.
Zang, K.
Choi, W.K. 
Tay, A.A.O. 
Chua, S.-J. 
Issue Date: 2012
Source: Ho, J.-W.,Wee, Q.,Dumond, J.,Zhang, L.,Zang, K.,Choi, W.K.,Tay, A.A.O.,Chua, S.-J. (2012). Wafer-scale, highly-ordered silicon nanowires produced by step-and-flash imprint lithography and metal-assisted chemical etching. Materials Research Society Symposium Proceedings 1512 : 7-13. ScholarBank@NUS Repository. https://doi.org/10.1557/opl.2012.1663
Abstract: A combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4″ silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highly-ordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing. © 2012 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84360
ISBN: 9781632661050
ISSN: 02729172
DOI: 10.1557/opl.2012.1663
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