Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469213
Title: Very high κ and high density TiTaO MIM capacitors for analog and RF applications
Authors: Chiang, K.C.
Chin, A. 
Lai, C.H.
Chen, W.J.
Cheng, C.F.
Hung, B.F.
Liao, C.C.
Issue Date: 2005
Citation: Chiang, K.C.,Chin, A.,Lai, C.H.,Chen, W.J.,Cheng, C.F.,Hung, B.F.,Liao, C.C. (2005). Very high κ and high density TiTaO MIM capacitors for analog and RF applications. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 62-63. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469213
Abstract: For the first time, high density (10.3 fF/μm2), low voltage linearity (α=89 ppm/V2) and small leakage current (1.2×10-8 A/cm2 or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-κ TiTaO (κ=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm2 density and low 81 ppm/V2 linearity for higher speed analog/RF ICs at IGHz, using the fast α decay mechanism with increasing frequency.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84350
ISSN: 07431562
DOI: 10.1109/.2005.1469213
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