Please use this identifier to cite or link to this item: https://doi.org/10.1109/MWSYM.2005.1516582
Title: Very high density RF MIM capacitor compatible with VLSI
Authors: Chiang, K.C.
Lai, C.H.
Chin, A. 
Kao, H.L.
McAlister, S.P.
Chi, C.C.
Keywords: Capacitor
MIM
RF
TiTaO
Issue Date: 2005
Source: Chiang, K.C., Lai, C.H., Chin, A., Kao, H.L., McAlister, S.P., Chi, C.C. (2005). Very high density RF MIM capacitor compatible with VLSI. IEEE MTT-S International Microwave Symposium Digest 2005 : 287-290. ScholarBank@NUS Repository. https://doi.org/10.1109/MWSYM.2005.1516582
Abstract: We have fabricated RF MEM capacitors, using high-κ TiTaO as the dielectric, which show a record high density of 20 fF/μm 2. In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pF and a high Q of 120. This was for a typical large 8 pF TiTaO MIM capacitor. The small voltage dependence of the capacitance (ΔC/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits. © 2005 IEEE.
Source Title: IEEE MTT-S International Microwave Symposium Digest
URI: http://scholarbank.nus.edu.sg/handle/10635/84349
ISBN: 0780388461
ISSN: 0149645X
DOI: 10.1109/MWSYM.2005.1516582
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