Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210149
Title: Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
Authors: Gong, X.
Zhu, Z.
Kong, E.
Cheng, R. 
Subramanian, S.
Goh, K.H.
Yeo, Y.-C. 
Issue Date: 2012
Source: Gong, X.,Zhu, Z.,Kong, E.,Cheng, R.,Subramanian, S.,Goh, K.H.,Yeo, Y.-C. (2012). Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210149
Abstract: We report the demonstration of an ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET where a self-aligned cavity is formed right beneath the channel layer. Self-aligned Pd-InGaAs source/drain (S/D) contacts were integrated. The gate length L G of 130 nm is the smallest achieved with self-aligned contacts. With effective reduction of subsurface leakage current by the III-V-on-nothing device structure, DIBL of 248 mV/V and SS of 135 mV/decade were achieved. © 2012 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84338
ISBN: 9781457720840
ISSN: 19308868
DOI: 10.1109/VLSI-TSA.2012.6210149
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Jan 9, 2018

Page view(s)

25
checked on Jan 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.