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|Title:||Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology|
|Source:||Gong, X.,Zhu, Z.,Kong, E.,Cheng, R.,Subramanian, S.,Goh, K.H.,Yeo, Y.-C. (2012). Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210149|
|Abstract:||We report the demonstration of an ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET where a self-aligned cavity is formed right beneath the channel layer. Self-aligned Pd-InGaAs source/drain (S/D) contacts were integrated. The gate length L G of 130 nm is the smallest achieved with self-aligned contacts. With effective reduction of subsurface leakage current by the III-V-on-nothing device structure, DIBL of 248 mV/V and SS of 135 mV/decade were achieved. © 2012 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
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