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|Title:||Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction|
|Citation:||Guo, P., Yang, Y., Cheng, Y., Han, G., Chia, C.K., Yeo, Y.-C. (2012). Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction. ECS Transactions 50 (9) : 971-978. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0971ecst|
|Abstract:||In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metalorganic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated using high-resolution x-ray photoelectron spectroscopy (XPS) and the valence band offset was determined to be 0.5 ± 0.1 eV. Therefore, Ge/In0.53Ga 0.47As heterojunction has a staggered band alignment at the interface, which is a good candidate for the tunneling junction in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped P+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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