Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0971ecst
Title: Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction
Authors: Guo, P.
Yang, Y.
Cheng, Y.
Han, G. 
Chia, C.K.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Guo, P., Yang, Y., Cheng, Y., Han, G., Chia, C.K., Yeo, Y.-C. (2012). Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction. ECS Transactions 50 (9) : 971-978. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0971ecst
Abstract: In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metalorganic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated using high-resolution x-ray photoelectron spectroscopy (XPS) and the valence band offset was determined to be 0.5 ± 0.1 eV. Therefore, Ge/In0.53Ga 0.47As heterojunction has a staggered band alignment at the interface, which is a good candidate for the tunneling junction in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped P+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/84329
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0971ecst
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