Please use this identifier to cite or link to this item:
|Title:||Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction|
|Source:||Guo, P., Yang, Y., Cheng, Y., Han, G., Chia, C.K., Yeo, Y.-C. (2012). Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction. ECS Transactions 50 (9) : 971-978. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0971ecst|
|Abstract:||In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metalorganic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated using high-resolution x-ray photoelectron spectroscopy (XPS) and the valence band offset was determined to be 0.5 ± 0.1 eV. Therefore, Ge/In0.53Ga 0.47As heterojunction has a staggered band alignment at the interface, which is a good candidate for the tunneling junction in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped P+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 27, 2018
WEB OF SCIENCETM
checked on Feb 19, 2018
checked on Mar 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.