Please use this identifier to cite or link to this item:
Title: Tunable trench gate power MOSFET: A feasible superjunction device and process technology
Authors: Yang, X.
Liang, Y.C. 
Samudra, G.S. 
Liu, Y.
Issue Date: 2004
Citation: Yang, X.,Liang, Y.C.,Samudra, G.S.,Liu, Y. (2004). Tunable trench gate power MOSFET: A feasible superjunction device and process technology. IECON Proceedings (Industrial Electronics Conference) 1 : 729-733. ScholarBank@NUS Repository.
Abstract: For power semiconductor MOSFET devices, the oxide-bypassed structure utilizes the oxide thickness control in fabrication instead of the complicated doping control in translating the unipolar on-resistance R ON versus the blocking voltage V BR tradeoff limit beyond the conventional unipolar silicon limit The structure also provides the option to utilize an additional bias voltage to compensate possible process variations in order to enhance the breakdown voltage. This paper describes the structure, fabrication process and the laboratory results on the tunable oxide-bypassed trench gate power MOSFET. The technology is proven to be feasible in making superjunction MOSFET devices for power electronic applications. © 2004 IEEE.
Source Title: IECON Proceedings (Industrial Electronics Conference)
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Sep 21, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.