Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1815374
Title: Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices
Authors: Liew, Y.-F.
Zhu, F.
Chua, S.-J. 
Tang, J.-X.
Issue Date: 8-Nov-2004
Citation: Liew, Y.-F., Zhu, F., Chua, S.-J., Tang, J.-X. (2004-11-08). Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices. Applied Physics Letters 85 (19) : 4511-4513. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1815374
Abstract: Tris-(8-hydroxyquinoline)aluminum (Alq 3), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼ 0.6-1.08 eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq 3, a few nanometers thick. The presence of an Alq 3 interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs. © 2004 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/84324
ISSN: 00036951
DOI: 10.1063/1.1815374
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