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|Title:||Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices|
|Citation:||Liew, Y.-F., Zhu, F., Chua, S.-J., Tang, J.-X. (2004-11-08). Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices. Applied Physics Letters 85 (19) : 4511-4513. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1815374|
|Abstract:||Tris-(8-hydroxyquinoline)aluminum (Alq 3), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼ 0.6-1.08 eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq 3, a few nanometers thick. The presence of an Alq 3 interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs. © 2004 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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