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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84321
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dc.titleTransient temperature measurements of resist heating using nanothermocouples
dc.contributor.authorChu, D.
dc.contributor.authorWong, W.-K.
dc.contributor.authorGoodson, K.E.
dc.contributor.authorPease, R.F.W.
dc.date.accessioned2014-10-07T04:51:21Z
dc.date.available2014-10-07T04:51:21Z
dc.date.issued2003-11
dc.identifier.citationChu, D.,Wong, W.-K.,Goodson, K.E.,Pease, R.F.W. (2003-11). Transient temperature measurements of resist heating using nanothermocouples. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (6) : 2985-2989. ScholarBank@NUS Repository.
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84321
dc.description.abstractThe implication of nanothermocouples for measuring transient temperature of resist heating was analyzed. The variation in feature size and pattern displacement in photomask fabrication was observed due to resist heating. Transient resist heating measurements, obtained by thermocouples, were in microsecond scale. The fabrication of thin film thermocouples of gold/nickel, with 100 nm minimum junction size, on si and quartz substrates was discussed. A increase in temperature by 25 and 40 K was observed because of electron dosages of 5 and 15 μC/cm 2.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume21
dc.description.issue6
dc.description.page2985-2989
dc.description.codenJVTBD
dc.identifier.isiutNOT_IN_WOS
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