Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734488
Title: Towards ultimate CMOS performance with new stressor materials
Authors: Yeo, Y.-C. 
Issue Date: 2008
Citation: Yeo, Y.-C. (2008). Towards ultimate CMOS performance with new stressor materials. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 121-125. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734488
Abstract: In this paper, new technology options for boosting the performance of CMOS transistors pioneered by our group will be discussed. We focus on several new strain engineering techniques that were recently demonstrated for enhancing electron and hole mobilities in n-FET and p-FET, respectively. New applications of materials such as diamond-like carbon high-stress liner, silicon-carbon (Si:C or Si1-yCy) source/drain, and silicon-germanium-tin (SiGeSn) source/drain, and other novel heterostructures will be reviewed. Integration of new stressors in advanced device architectures is expected to enable the realization of ultimate CMOS performance. © 2008 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/84317
ISBN: 9781424421855
DOI: 10.1109/ICSICT.2008.4734488
Appears in Collections:Staff Publications

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