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Title: Three-port RF characterization of MOS transistors
Authors: Mahalingam, U.
Rustagi, S.C.
Samudra, G.S. 
Keywords: Admittance matrix
Scattering parameters measurement
Issue Date: 2005
Citation: Mahalingam, U.,Rustagi, S.C.,Samudra, G.S. (2005). Three-port RF characterization of MOS transistors. 65th ARFTG Microwave Measurements Conference Digest 2005 : 57-62. ScholarBank@NUS Repository.
Abstract: This paper presents the complete RF characterization of a MOSFET in terms of its 3-port admittance network parameters up to the cut-off frequency. The effect of the non-ideal short presented by the GPG (Ground Power Ground) probe - used at the third port for 2-port RF measurements - on characterized data is discussed. An algorithm is developed to de-embed the non-ideal short by (i) characterizing the GPG probe, (ii) representing the transistor by its general equivalent circuit whose components are extracted from the measured y-parameter data in three different configurations, and, (iii) reconstructing the 3-port parameters after removing the GPG probe impedance from the network. The validity of the method is demonstrated by the close agreement between diagonal elements of the 3-port admittance matrix obtained from two different configurations. Without probe de-embedding, the disagreement is over 70% at higher frequencies in some of the parameters. From the accurate de-embedded admittance parameters, the measured 3-port capacitance coefficients for the MOS transistor at different frequencies and biases are reported for the first time. Interestingly, it is observed that the non-quasi-static channel conduction manifests as the increasing difference in the magnitudes of Gsg (trans-conductance in Common Drain configuration) and Gdg (trams-conductance in Common Source configuration) with frequency.
Source Title: 65th ARFTG Microwave Measurements Conference Digest 2005
ISBN: 0780388585
DOI: 10.1109/ARFTGS.2005.1500569
Appears in Collections:Staff Publications

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