Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2010.5667699
Title: Theoretical study on geometry and temperature effects of thermoelectric properties of Si and Ge nanowires
Authors: Huang, W.
Koong, C.S.
Liang, G. 
Issue Date: 2010
Citation: Huang, W.,Koong, C.S.,Liang, G. (2010). Theoretical study on geometry and temperature effects of thermoelectric properties of Si and Ge nanowires. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1832-1834. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2010.5667699
Abstract: Thermoelectric properties of Si and Ge nanowires are studied theoretically using sp3d5s* tight-binding and ballistic transport approach. We found that the Seebeck coefficient and power factor per area depend on the nanowire size and its orientation. In addition, for nano-scale nanowires, cross-sectional shape effect is considerable and transmission mode dominates the performance. Temperature also has a great impact on the thermoelectric performance of nanowires. The power factor of Si nanowires along different orientations is approaching to the same value as temperature growing higher than 300 K; while power factor of Ge nanowires along [100] is the largest at high temperature, but the smallest at extreme low temperature. ©2010 IEEE.
Source Title: ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84297
ISBN: 9781424457984
DOI: 10.1109/ICSICT.2010.5667699
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