Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84272
Title: TDDB characteristics of ultra-thin HfN/HfO2 gate stack
Authors: Yang, H.
Sa, N.
Tang, L.
Liu, X.
Kang, J.
Han, R.
Yu, H.Y. 
Ren, C.
Li, M.-F. 
Chan, D.S.H. 
Kwong, D.-L.
Issue Date: 2004
Source: Yang, H.,Sa, N.,Tang, L.,Liu, X.,Kang, J.,Han, R.,Yu, H.Y.,Ren, C.,Li, M.-F.,Chan, D.S.H.,Kwong, D.-L. (2004). TDDB characteristics of ultra-thin HfN/HfO2 gate stack. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 : 808-811. ScholarBank@NUS Repository.
Abstract: In this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) for the ultra thin HiN/HfO2 gate stack (EOT∼0.9nm) under negative constant voltage stress (CVS) was studied. Area scaling consistent with Weibull statistics as in SiO2 was observed in the HfN/HfO2 gate stack, demonstrating that intrinsic effects dominate TDDB characteristics of the ultra thin HfN/HfO2 gate stack. A new model on the mechanism of electric-field dependent TDDB was proposed. In this model, the reliability of HfN/HfO2 gate stack is dominated by the breakdown of HfD2 bulk layer under high electric field stressing and by the breakdown of the interfacial layer (IL) under low electric field stressing, respectively. © 2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/84272
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