Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84254
Title: Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs
Authors: Lee, R.T.P. 
Tan, K.-M.
Liow, T.-Y.
Lim, A.E.-J.
Lo, G.-Q.
Samudra', G.S. 
Chi, D.-Z.
Yeo, Y.-C. 
Issue Date: 2007
Source: Lee, R.T.P.,Tan, K.-M.,Liow, T.-Y.,Lim, A.E.-J.,Lo, G.-Q.,Samudra', G.S.,Chi, D.-Z.,Yeo, Y.-C. (2007). Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs. Materials Research Society Symposium Proceedings 995 : 73-78. ScholarBank@NUS Repository.
Abstract: We investigated the material and electrical characteristics of platinum and ytterbium silicides for potential applications as metallic Schottky-barrier source/drain (S/D) and fully-silicided (FUSI) gate electrodes in fin field-effect transistors (FinFETs). Due to the low electro-negativity parameter of ytterbium, a low temperature silicidation process was developed to avoid the reaction of ytterbium with the isolation regions (i.e. SiO2 and SiN) to integrate ytterbium silicide successfully in mesa-isolated n-FinFETs. The integration of FUSI metal gate into p-FinFETs was also explored in this work and a novel two-step silicidation process that integrates simultaneously two different phases of platinum silicide with the appropriate work function values for gate electrode and source/drain application was demonstrated. © 2007 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84254
ISBN: 9781605604275
ISSN: 02729172
Appears in Collections:Staff Publications

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