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|Title:||Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs|
|Authors:||Lee, R.T.P. |
|Source:||Lee, R.T.P.,Tan, K.-M.,Liow, T.-Y.,Lim, A.E.-J.,Lo, G.-Q.,Samudra', G.S.,Chi, D.-Z.,Yeo, Y.-C. (2007). Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs. Materials Research Society Symposium Proceedings 995 : 73-78. ScholarBank@NUS Repository.|
|Abstract:||We investigated the material and electrical characteristics of platinum and ytterbium silicides for potential applications as metallic Schottky-barrier source/drain (S/D) and fully-silicided (FUSI) gate electrodes in fin field-effect transistors (FinFETs). Due to the low electro-negativity parameter of ytterbium, a low temperature silicidation process was developed to avoid the reaction of ytterbium with the isolation regions (i.e. SiO2 and SiN) to integrate ytterbium silicide successfully in mesa-isolated n-FinFETs. The integration of FUSI metal gate into p-FinFETs was also explored in this work and a novel two-step silicidation process that integrates simultaneously two different phases of platinum silicide with the appropriate work function values for gate electrode and source/drain application was demonstrated. © 2007 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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