Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744219
Title: Study of large-grained n-type polycrystalline silicon thin films made by the solid phase crystallization method
Authors: Kumar, A.
Widenborg, P.I. 
Law, F.
Hidayat, H.
Dalapati, G.K.
Aberle, A.G. 
Keywords: Crystal quality
EBSD
Grain Size
Hall mobility
Photovoltaic cells
Silicon
SPC
Issue Date: 2013
Citation: Kumar, A.,Widenborg, P.I.,Law, F.,Hidayat, H.,Dalapati, G.K.,Aberle, A.G. (2013). Study of large-grained n-type polycrystalline silicon thin films made by the solid phase crystallization method. Conference Record of the IEEE Photovoltaic Specialists Conference : 586-588. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744219
Abstract: N-type polycrystalline silicon (poly-Si) films with large grains exceeding 30 μm in width are successfully prepared by the solid phase crystallization (SPC) technique on glass through a control of the PH3 gas flow rate. The grains in the poly-Si films are investigated by electron backscatter diffraction (EBSD) and are found to be randomly oriented, whereby the average grain size ranges from 4.3 to 18 μm. The grain size in the poly-Si film increases with increasing PH3 gas flow rate. The impact of the PH3 flow rate on the crystal quality and the electronic properties of the poly-Si thin-film solar cells are systematically investigated using UV reflectance and Hall effect measurements. A Hall mobility of about 71.5 cm 2/Vs for n+ doped poly-Si films with a carrier concentration of 2.3×1019 cm-3 is obtained. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/84250
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6744219
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