Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2009.5173390
Title: Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
Authors: Liu, W.J.
Huang, D.
Sun, Q.Q.
Liao, C.C.
Zhang, L.F.
Gan, Z.H.
Wong, W.
Li, M.-F. 
Keywords: NBTI
p-MOSFETs
Plasma nitrided oxide
Thermal nitrided oxide
Issue Date: 2009
Citation: Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2009). Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods. IEEE International Reliability Physics Symposium Proceedings : 964-968. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2009.5173390
Abstract: NBTI in pMOSFETs with plasma (PNO) and thermal (TNO) nitrided SiON gate oxides are re-investigated using our newly developed on-the-fly interface trap (OFIT) and fast pulse I-V measurement (FPM) methods. The threshold voltage shift ΔVTH is quantitatively decomposed into interface trap and oxide charge components. It is found that the interface trap generation under stress follows the power law with the same power index n and its temperature dependence, indicating the same interface degradation mechanism for both PNO and TNO devices. The NBTI degradation in TNO devices is larger than those in PNO devices, particularly the larger component of oxide charge. The result is explained by the different N profile of TNO from that of PNO devices, as supported by the first principle calculation. ©2009 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84243
ISBN: 0780388038
ISSN: 15417026
DOI: 10.1109/IRPS.2009.5173390
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