Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDSSC.2007.4450079
Title: Structure effects in the gate-all-around silicon nanowire MOSFETs
Authors: Liang, G. 
Issue Date: 2007
Citation: Liang, G. (2007). Structure effects in the gate-all-around silicon nanowire MOSFETs. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 : 129-132. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2007.4450079
Abstract: We theoretically examine the Structure effects (cross-section shape, channel orientation and the size of nanowires) of the gate-all-around Silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) on their ultimate performance. Among these different types of Silicon nanowire MOSFETs, the rectangular nanowire MOSFETs present the best device performance in terms of the ON-state currents with the consideration of the fixed nanowire size. However, the triangular nanowire MOSFETs show the largest bandgap change caused by the quantum confinement effects, indicating the largest VT variations. As the size of the nanowire decreases, the quantum effects play the more important role in the device performance, for example, the significant performance enhancements in the P-type MOSFETs due to carrier effective mass changes in P-type Si nanowire MOSFETs. © 2007 IEEE.
Source Title: IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
URI: http://scholarbank.nus.edu.sg/handle/10635/84242
ISBN: 1424406374
DOI: 10.1109/EDSSC.2007.4450079
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