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|Title:||Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide|
|Authors:||Bera, L.K. |
|Source:||Bera, L.K.,Choi, W.K.,McNeill, D.,Ray, S.K.,Chatterjee, S.,Maiti, C.K. (2001). Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide. Materials Research Society Symposium - Proceedings 640 : H5.14.1-H5.14.6. ScholarBank@NUS Repository.|
|Abstract:||We have investigated the structural and electrical properties of as-prepared and rapid thermal oxynitride films on C+ implanted solid phase epitaxially grown SiC. The oxynitride was grown using N2O. The C concentration of the samples was estimated to be 1, 2 and 5 at.%. From the infrared spectra, samples with 1 and 2 at. % carbon showed that the carbon was substitutionally incorporated into the silicon. No precipitation of SiC was detected. However, for the 5 at. % C sample, some precipitation was observed as indicated by a broad peak at ∼800 cm-1. The oxynitride films showed the Si-O-Si stretching mode at ∼1100 cm-1. The shoulder at 980-1067 cm-1 was due to the O-Si-N bond. The peak at 830 cm-1 was due to the Si-N and Si-C bonds and C-O complex vibrational mode was observed at 663 cm-1. Electrical characterization of the oxynitride films was carried out using the MOS capacitor structure. The interface state density was found to range between 5.7×1011 to 3.35×1012 cm-2eV-1 and increased with an increase in the C concentration. The electrical breakdown field was found to be in the range of 5-7 MV cm-1 and reduced with an increase in C concentration. The charge-to-breakdown value was measured and decreased with an increase in C concentration.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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