Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2008.4530829
Title: Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content
Authors: Liow, T.-Y.
Tan, K.-M.
Weeks, D.
Lee, R.T.P. 
Zhu, M. 
Hoe, K.-M.
Tung, C.-H.
Bauer, M.
Spear, J.
Thomas, S.G.
Samudra, G.S. 
Balasubramanian, N.
Yeo, Y.-C. 
Issue Date: 2008
Citation: Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 126-127. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530829
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84230
ISBN: 9781424416158
DOI: 10.1109/VTSA.2008.4530829
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