Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84229
Title: Strained channel transistor using strain field induced by source and drain stressors
Authors: Yeo, Y.-C. 
Sun, J.
Ong, E.H. 
Issue Date: 2004
Source: Yeo, Y.-C.,Sun, J.,Ong, E.H. (2004). Strained channel transistor using strain field induced by source and drain stressors. Materials Research Society Symposium Proceedings 809 : 219-224. ScholarBank@NUS Repository.
Abstract: We perform a theoretical evaluation of the strain field in a p-channel transistor with silicon-germanium (Si 1-yGe y) stressors in the source and drain regions. The strain field comprises a lateral compressive strain component and a vertical tensile strain component. The lateral strain component is larger in magnitude and more uniformly distributed as compared to the vertical strain component. The impact of transistor design parameters, such as the Ge mole fraction y in the stressors, the spacing L between stressors, the stressor depth, and the raised stressor height, on the strain field are investigated. Hole mobility enhancement larger than 30% is achievable wth L = 50 nm and y = 0.15. More aggressive mobility enhancement targets may be achievable by reducing the stressor spacing and employing a stressor with a larger lattice mismatch with the Si channel.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84229
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

34
checked on Feb 15, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.