Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84227
Title: Strain engineering for hole mobility enhancement in P-channel field-effect transistors
Authors: Yeo, Y.-C. 
Issue Date: 2004
Source: Yeo, Y.-C. (2004). Strain engineering for hole mobility enhancement in P-channel field-effect transistors. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 310-314. ScholarBank@NUS Repository.
Abstract: A very promising strain engineering technique for enhancing the performance of p-channel transistors employs silicon-germanium (Si 1-yGe y) source and drain Stressors. To further exploit this method of strain engineering, the physical mechanism by which the SiGe source/drain (S/D) stressors contribute to the strain field needs to be understood. We evaluate the strain field due to the SiGe source/drain stressor, and examine two important strain components that affect transistor performance: the lateral compressive strain component and the vertical tensile strain component. The impact of transistor design parameters, such as the Ge mole fraction y in the stressors, the spacing L between stressors, the stressor depth d, and the raised stressor height h, on the strain field are investigated. Hole mobility enhancement larger than 30% is achieveable wth L = 50 nm and y = 0.15. More aggressive mobility enhancement targets may be achievable by reducing the stressor spacing and employing a stressor with a larger lattice mismatch with the Si channel. © 2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/84227
Appears in Collections:Staff Publications

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