Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2012.6317780
Title: State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells
Authors: Duttagupta, S.
Lin, F. 
Shetty, K.D.
Wilson, M.
Ma, F.-J. 
Lin, J. 
Aberle, A.G. 
Hoex, B. 
Keywords: boron emitter
firing activation
industrial PECVD AlOx/SiN x stacks
surface passivation
Issue Date: 2012
Source: Duttagupta, S.,Lin, F.,Shetty, K.D.,Wilson, M.,Ma, F.-J.,Lin, J.,Aberle, A.G.,Hoex, B. (2012). State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference : 1036-1039. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2012.6317780
Abstract: Extremely low emitter saturation current density (J0e) values of 6 and 45 fA/cm2, respectively, are reported for 220 and 30 Ω/sq planar p+ boron emitters passivated by an AlO x/SiNx stack deposited in an industrial plasma-enhanced chemical vapor deposition (PECVD) reactor. The thermal activation of the AlOx films is performed in a standard industrial fast firing furnace, making the developed passivation stack industrially viable. For textured p + emitters the J0e values are found to be 1.5 - 2 times higher compared to planar emitters. This excellent surface passivation is attributed to a high negative charge density of -(3-6)×1012 cm-2 in combination with a low interface defect density of 10 11 eV1cm2. Assuming a short-circuit current density of 40 mA/cm2 and the ideal diode law, the J0e result for the 80 Ω/sq emitter represents a 1-sun open-circuit voltage limit of 736 mV at 25°C. © 2012 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/84221
ISBN: 9781467300643
ISSN: 01608371
DOI: 10.1109/PVSC.2012.6317780
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