Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2007.893697
Title: Spin dependent tunneling device utilizing the magneto-coulomb effect
Authors: Jalil, M.B.A. 
Tan, S.G. 
Keywords: Coulomb blockade
Magneto-Coulomb effect
Magnetoconductance
Single electron tunneling transistor
Issue Date: Jun-2007
Source: Jalil, M.B.A., Tan, S.G. (2007-06). Spin dependent tunneling device utilizing the magneto-coulomb effect. IEEE Transactions on Magnetics 43 (6) : 2800-2802. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2007.893697
Abstract: We investigate the magneto-Coulomb effect in a single-electron tunneling transistor (SETT) with ferromagnetic leads. This effect enables us to achieve a magnetic field control, as opposed to the conventional electrical gate control of the SETT. By utilizing the sharp magnetic switching of the ferromagnetic (FM) source and drain electrodes, the magneto-Coulomb effect can attain a large magnetoconductance (MC) change in response to the applied magnetic B-field. We analyze the effect of the B-field on the effective charge Q̃ on the island, and analytically obtain the step change ΔQ̃ at the coercive field Bc of the FM leads. We also derive the optimal biasing conditions of Vg = (n ± 1/4)e/Cg and Vds ≈ V th (threshold bias). Such bias conditions ensure the maximum sensitivity (dI/dQ̃) of the SETT modulation to Q̃, and hence to the applied B-field. The magnetoconductance response of the SETT under the optimal biasing condition is numerically calculated based on the assumption of single-domain switching of the FM leads. © 2007 IEEE.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/84213
ISSN: 00189464
DOI: 10.1109/TMAG.2007.893697
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