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Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2011.5991711
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dc.titleSource/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
dc.contributor.authorDa, H.
dc.contributor.authorLam, K.-T.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorLiang, G.
dc.contributor.authorChin, S.-K.
dc.date.accessioned2014-10-07T04:50:01Z
dc.date.available2014-10-07T04:50:01Z
dc.date.issued2011
dc.identifier.citationDa, H.,Lam, K.-T.,Samudra, G.S.,Liang, G.,Chin, S.-K. (2011). Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/INEC.2011.5991711" target="_blank">https://doi.org/10.1109/INEC.2011.5991711</a>
dc.identifier.isbn9781457703799
dc.identifier.issn21593523
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84206
dc.description.abstractWe investigate the device performance of heterojunction graphene nanoribbons tunneling field-effect transistors as a function of the doping concentrations based on the non-equilibrium Green's function. We observe that variation in source doping changes the OFF-state currents (IOFF), the ON-state currents (ION) and the subthreshold slope (SS) significantly while variation in drain doping changes mainly the I OFF. Additionally, low SS and large ION/IOFF ratio can be achieved by applying proper asymmetric source-drain doping. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/INEC.2011.5991711
dc.sourceScopus
dc.subjectdevice performance
dc.subjectdoping concentration
dc.subjectgraphene nanoribbon
dc.subjectheterojunction
dc.subjecttunneling field-effect transistors
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/INEC.2011.5991711
dc.description.sourcetitleProceedings - International NanoElectronics Conference, INEC
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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