Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2011.5991711
Title: Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
Authors: Da, H. 
Lam, K.-T.
Samudra, G.S. 
Liang, G. 
Chin, S.-K.
Keywords: device performance
doping concentration
graphene nanoribbon
heterojunction
tunneling field-effect transistors
Issue Date: 2011
Source: Da, H.,Lam, K.-T.,Samudra, G.S.,Liang, G.,Chin, S.-K. (2011). Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2011.5991711
Abstract: We investigate the device performance of heterojunction graphene nanoribbons tunneling field-effect transistors as a function of the doping concentrations based on the non-equilibrium Green's function. We observe that variation in source doping changes the OFF-state currents (IOFF), the ON-state currents (ION) and the subthreshold slope (SS) significantly while variation in drain doping changes mainly the I OFF. Additionally, low SS and large ION/IOFF ratio can be achieved by applying proper asymmetric source-drain doping. © 2011 IEEE.
Source Title: Proceedings - International NanoElectronics Conference, INEC
URI: http://scholarbank.nus.edu.sg/handle/10635/84206
ISBN: 9781457703799
ISSN: 21593523
DOI: 10.1109/INEC.2011.5991711
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