Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734672
Title: SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation
Authors: He, W. 
Chan, D.S.H. 
Cho, B.-J.
Issue Date: 2008
Source: He, W.,Chan, D.S.H.,Cho, B.-J. (2008). SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 835-838. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734672
Abstract: LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaA1Ox compare to La20 3 deposition. The mechanism behind improvement is proposed. ALD LaA1Ox is found to be thermally stable up to 850°C anneal. Compared with A12O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking oxide demonstrate similar retention performance with much faster operation speed and better resistance to high operation voltage and high stress. The results indicate that LaA1O x is an attractive candidate as a blocking layer in SONOS type flash memory application. © 2008 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/84205
ISBN: 9781424421855
DOI: 10.1109/ICSICT.2008.4734672
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