Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4729068
Title: Simulation of tunneling field-effect transistors with extended source structures
Authors: Yang, Y.
Guo, P.
Han, G. 
Lu Low, K.
Zhan, C.
Yeo, Y.-C. 
Issue Date: 1-Jun-2012
Source: Yang, Y., Guo, P., Han, G., Lu Low, K., Zhan, C., Yeo, Y.-C. (2012-06-01). Simulation of tunneling field-effect transistors with extended source structures. Journal of Applied Physics 111 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4729068
Abstract: In this paper, we perform a study of novel source structures in double-gate (DG) Tunneling Field-Effect Transistors (TFETs) by two-dimensional numerical simulation of source structures in double gate tunneling field effect. Extended source structures are employed in both pure Ge TFETs and Ge-source Si-body TFETs, and on-state current enhancement is observed in simulation results. Compared with conventional p +-p --n + TFETs, the p + region in extended source TFETs extends underneath the gates. When large gate bias is applied, high electric field ξ, which distributes along p +-p - junction edge extends into the middle of the channel. More tunneling paths with short lengths are available in the on-state, effectively boosting the drive current of TFET. In addition, the extent of performance enhancement depends on the geometry of the extended source. By incorporating heterojunction, TFET drive current can be increased further, which is up to 0.8 mA/μm at V GS V DS 0.7 V. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/84190
ISSN: 00218979
DOI: 10.1063/1.4729068
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