Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2004.03.116
Title: SIMS study on N diffusion in hafnium oxynitride
Authors: Gui, D.
Kang, J. 
Yu, H. 
Lim, H.F. 
Keywords: Diffusion
Hafnium oxynitride
High-k
Segregation
SIMS
Issue Date: 15-Jun-2004
Citation: Gui, D., Kang, J., Yu, H., Lim, H.F. (2004-06-15). SIMS study on N diffusion in hafnium oxynitride. Applied Surface Science 231-232 : 590-593. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.03.116
Abstract: As the MOS device feature size continues to shrink, novel high-k gate dielectrics should be adopted to reduce the unacceptable high gate leakage current due to direct tunneling. HfO2 is one of the most promising high-k materials. It was reported that HfNxOy formed by incorporating N into HfO2 could improve the thermal stability and electrical properties of the gate dielectric films. However, N loss can occur due to subsequent high temperature processes, such as rapid thermal processing (RTP). It is necessary to understand the mechanism of N loss from the academic and application points of view. In this study, SIMS was applied to investigate the N diffusion behavior in sputter-deposited HfNxOy after RTP processing. The results showed that N loss is due to out-diffusion of N to the surface. On the other hand, segregation of N at the interface of HfN xOy/Si was observed. N acts as a good barrier to O diffusion from HfNxOy to Si. The results show that oxygen flooding is unfavorable for characterizing N in HfNxOy/Si since oxygen flooding can enhance the N background. © 2004 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/84186
ISSN: 01694332
DOI: 10.1016/j.apsusc.2004.03.116
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Jul 16, 2018

WEB OF SCIENCETM
Citations

3
checked on Jul 16, 2018

Page view(s)

41
checked on Jul 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.