Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3203958
Title: Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
Authors: Koh, S.-M.
Zhou, W.J.
Lee, R.T.P. 
Sinha, M.
Ng, C.-M.
Zhao, Z.
Maynard, H.
Variam, N.
Erokhin, Y.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2009
Citation: Koh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C. (2009). Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage. ECS Transactions 25 (7) : 211-216. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3203958
Abstract: We report two distinct approaches to reduce leakage and parasitic resistance in Silicon:Carbon (Si:C) region. First, the effectiveness of a low-thermal budget post-Solid-Phase-Epitaxy (post-SPE) anneal in the suppression of leakages is examined. Second, we have developed a novel nickel-aluminide suicide (NiAlSirC) with dopant-segregation (DS) technology to reduce the Schottky-Barrier height (SBH) for Si:C contacts. An optimum 18% substitutional incorporation of Al in the suicide matrix leads to a 10% reduction in the intrinsic SBH of NiSi:C. A low electron schottky barrier Φ n B of 0.118 eV was attained with NiAlSi:C contacts on phosphorous-segregated regions. The results on Si:C establish a technique to achieve low leakage, low SBH for low contact resistance and low sheet resistance for Si:C S/D application. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/84183
ISBN: 9781566777445
ISSN: 19385862
DOI: 10.1149/1.3203958
Appears in Collections:Staff Publications

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