Please use this identifier to cite or link to this item:
|Title:||Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs|
|Citation:||Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007). Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 131-134. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418882|
|Abstract:||We report a new silicon-germanium-tin (SiGeSn) source and drain stressor with large lattice-mismatch with respect to Si or SiGe for channel strain engineering, and its integration in a SiGe-channel p-FET for performance enhancement. A novel CMOS-compatible process was developed to incorporate Sn in SiGe S/D with high levels of Sn-substitutionality: Sn implant into Si 0.75Ge0.25 source and drain (S/D) regions, followed by either excimer Laser annealing (LA) or Solid Phase Epitaxy (SPE) to restore S/D crystallinity. Sub-50 nm p-FETs were fabricated. With a substitutional Sn concentration of 8% in SiGe S/D regions, equivalent to forming Si 0.4Ge0.6 in the S/D region, enhancement of I Dsat and hole mobility are 82% and 135%, respectively, over control p-FETs without Sn incorporation. With the first demonstration of SiGeSn S/D stressors, we provide a technology extension to SiGe S/D technology for further p-FET enhancement. © 2007 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 21, 2019
WEB OF SCIENCETM
checked on Mar 11, 2019
checked on Feb 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.