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|Title:||Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs|
|Citation:||Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007). Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 131-134. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418882|
|Abstract:||We report a new silicon-germanium-tin (SiGeSn) source and drain stressor with large lattice-mismatch with respect to Si or SiGe for channel strain engineering, and its integration in a SiGe-channel p-FET for performance enhancement. A novel CMOS-compatible process was developed to incorporate Sn in SiGe S/D with high levels of Sn-substitutionality: Sn implant into Si 0.75Ge0.25 source and drain (S/D) regions, followed by either excimer Laser annealing (LA) or Solid Phase Epitaxy (SPE) to restore S/D crystallinity. Sub-50 nm p-FETs were fabricated. With a substitutional Sn concentration of 8% in SiGe S/D regions, equivalent to forming Si 0.4Ge0.6 in the S/D region, enhancement of I Dsat and hole mobility are 82% and 135%, respectively, over control p-FETs without Sn incorporation. With the first demonstration of SiGeSn S/D stressors, we provide a technology extension to SiGe S/D technology for further p-FET enhancement. © 2007 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
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