Please use this identifier to cite or link to this item: https://doi.org/10.1166/jnn.2008.460
Title: Shape-controlled growth of indium and aluminum nanostructures on MoS 2(0001)
Authors: Kushvaha, S.S. 
Xu, H. 
Zhang, H.L. 
Wee, A.T.S. 
Wang, X.-S. 
Keywords: Aluminum
Indium
MoS 2
Nanoparticles
Nucleation and growth
Scanning tunneling microscopy
Issue Date: May-2008
Citation: Kushvaha, S.S., Xu, H., Zhang, H.L., Wee, A.T.S., Wang, X.-S. (2008-05). Shape-controlled growth of indium and aluminum nanostructures on MoS 2(0001). Journal of Nanoscience and Nanotechnology 8 (5) : 2707-2712. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2008.460
Abstract: The growth of indium and aluminum nanostructures on molybdenum disulphide (MoS 2)(0001) substrate has been studied using scanning tunneling microscopy in ultra-high vacuum. At low coverage and room temperature (RT), mostly ultra-thin (∼1.2-2 nm) triangular In islands were observed on MoS 2. With increasing coverage or high flux, large coalesced irregular islands along with triangular and round-shaped ones of increased average height were found. Triangular and round-shaped islands were obtained after annealing the RT-deposited In on MoS 2 sample at 450 K. At ∼375 K, exclusively triangular In islands were observed. Al nanoparticles with diameter in 4-16 nm range were obtained after a low-flux deposited whereas ramified islands were observed in a high flux at RT. Ultra-thin (∼1.20-2 nm) Al islands and films were obtained on MoS 2 after deposition at 500 K. These results demonstrate that the shape of In and Al nanostructures grown on MoS 2 can be controlled in self-assembly by adjusting substrate temperature, deposition flux and amount. Copyright © 2008 American Scientific Publishers All rights reserved.
Source Title: Journal of Nanoscience and Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/84177
ISSN: 15334880
DOI: 10.1166/jnn.2008.460
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