Please use this identifier to cite or link to this item:
|Title:||Semiconducting β-FeSi2 for high efficiency and low cost photovoltaics|
|Source:||Kumar, A., Chi, D., Verma, L.K., Danner, A.J., Yang, H., Bhati, C.S. (2010). Semiconducting β-FeSi2 for high efficiency and low cost photovoltaics. Conference Record of the IEEE Photovoltaic Specialists Conference : 3359-3364. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2010.5617187|
|Abstract:||The beta phase of iron disilicide, β-FeSi2, behaves as a semiconductor and possesses three desirable material properties: direct band gap of around 0.87 eV, close lattice match with silicon (2-4% mismatch) and abundant availability of its constituent elements on the earth's crust. Moreover, its high optical absorption coefficient (one to two orders of magnitude higher than silicon) makes it a promising next generation semiconductor for photovoltaics with high performance and low environmental burden. The purpose of this work is to examine fundamental properties of β-FeSi2 material for application towards higher efficiency and low cost photovoltaics. Sputter deposition of Fe/Si multilayers was used to fabricate β-FeSi2 films. Conversion of the multilayer films to β-FeSi2 was accomplished by a thermal treatment under N 2atmosphere. β-FeSi2 films fabricated exhibited polycrystalline grains, with a direct energy band gap of 0.87 eV, an absorption coefficient in the order of 105 cm-1 and a residual carrier concentration due to electrons in the order of 1019 cm-3. Results of characterization using x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, UV-VIS-IR spectrophotometer measurements and Hall effect measurements have been discussed. © 2010 IEEE.|
|Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.