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|Title:||Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack|
|Citation:||Gao, F.,Lee, S.J.,Li, R.,Balakumar, S.,Tung, C.-H.,Chi, D.-Z.,Kwong, D.-L. (2006). Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack. Materials Research Society Symposium Proceedings 913 : 19-25. ScholarBank@NUS Repository.|
|Abstract:||We report thin SGOI (Silicon Germanium on Insulator) with 65% Ge concentration p-MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET. © 2006 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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