Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack

Abstract

We report thin SGOI (Silicon Germanium on Insulator) with 65% Ge concentration p-MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET. © 2006 Materials Research Society.