Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84160
Title: Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack
Authors: Gao, F.
Lee, S.J. 
Li, R.
Balakumar, S.
Tung, C.-H.
Chi, D.-Z.
Kwong, D.-L.
Issue Date: 2006
Citation: Gao, F.,Lee, S.J.,Li, R.,Balakumar, S.,Tung, C.-H.,Chi, D.-Z.,Kwong, D.-L. (2006). Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack. Materials Research Society Symposium Proceedings 913 : 19-25. ScholarBank@NUS Repository.
Abstract: We report thin SGOI (Silicon Germanium on Insulator) with 65% Ge concentration p-MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET. © 2006 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84160
ISBN: 1558998691
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

36
checked on Nov 23, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.