Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/84158
DC Field | Value | |
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dc.title | Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes | |
dc.contributor.author | Zhu, S. | |
dc.contributor.author | Chen, J. | |
dc.contributor.author | Yu, H.Y. | |
dc.contributor.author | Whang, S.J. | |
dc.contributor.author | Chen, J.H. | |
dc.contributor.author | Shen, C. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Du, A. | |
dc.contributor.author | Tung, C.H. | |
dc.contributor.author | Singh, J. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:49:28Z | |
dc.date.available | 2014-10-07T04:49:28Z | |
dc.date.issued | 2004 | |
dc.identifier.citation | Zhu, S.,Chen, J.,Yu, H.Y.,Whang, S.J.,Chen, J.H.,Shen, C.,Li, M.F.,Lee, S.J.,Zhu, C.,Chan, D.S.H.,Du, A.,Tung, C.H.,Singh, J.,Chin, A.,Kwong, D.L. (2004). Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 53-56. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84158 | |
dc.description.abstract | Bulk Schottky suicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0-2.5nm HfO 2 gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi suicide show excellent electrical performance of I on ∼10 7-10 8 and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi 2-x silicide have also demonstrated a very promising characteristic with a recorded high I on/I off radio of∼ 10 7 and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, -showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology. © 2004 IEEE. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT | |
dc.description.volume | 1 | |
dc.description.page | 53-56 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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