Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84158
Title: Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes
Authors: Zhu, S. 
Chen, J. 
Yu, H.Y. 
Whang, S.J. 
Chen, J.H. 
Shen, C.
Li, M.F. 
Lee, S.J. 
Zhu, C. 
Chan, D.S.H. 
Du, A.
Tung, C.H.
Singh, J.
Chin, A.
Kwong, D.L.
Issue Date: 2004
Source: Zhu, S.,Chen, J.,Yu, H.Y.,Whang, S.J.,Chen, J.H.,Shen, C.,Li, M.F.,Lee, S.J.,Zhu, C.,Chan, D.S.H.,Du, A.,Tung, C.H.,Singh, J.,Chin, A.,Kwong, D.L. (2004). Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 53-56. ScholarBank@NUS Repository.
Abstract: Bulk Schottky suicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0-2.5nm HfO 2 gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi suicide show excellent electrical performance of I on ∼10 7-10 8 and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi 2-x silicide have also demonstrated a very promising characteristic with a recorded high I on/I off radio of∼ 10 7 and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, -showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology. © 2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/84158
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

31
checked on Feb 22, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.