Please use this identifier to cite or link to this item: https://doi.org/10.1109/IWJT.2010.5474983
Title: Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reduction
Authors: Koh, S.-M.
Ng, C.-M.
Liu, P.
Mo, Z.-Q.
Wang, X.
Zheng, H.
Zhao, Z.-Y.
Variam, N.
Henry, T.
Erokhin, Y.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2010
Source: Koh, S.-M.,Ng, C.-M.,Liu, P.,Mo, Z.-Q.,Wang, X.,Zheng, H.,Zhao, Z.-Y.,Variam, N.,Henry, T.,Erokhin, Y.,Samudra, G.S.,Yeo, Y.-C. (2010). Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reduction. IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology : 86-89. ScholarBank@NUS Repository. https://doi.org/10.1109/IWJT.2010.5474983
Abstract: We report the first demonstration of a contact technology employing a combination of low energy Aluminum (Al) ion implantation and pulsed laser anneal (PLA) to form nickel silicide (NiSi) with low hole effective Schottky barrier height (ΦB p) on Si. First, the Al implant energy is reduced over prior work to ensure compatibility with thinner NiSi contacts. Second, the effect of PLA on silicide contact formation is investigated. Third, we show that increasing Al concentration at the silicide/Si interface while keeping the Al concentration within the silicide low is vital for reducing ΦB p. Successful implementation of the contact technology leads to ∼77 % reduction in ΦB p, achieving a low ΦB p of 0.104 eV. This opens up new options to lower ΦB p with reduced thermal budget for future technology generations.
Source Title: IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84156
ISBN: 9781424458691
DOI: 10.1109/IWJT.2010.5474983
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