Please use this identifier to cite or link to this item:
https://doi.org/10.1109/VTSA.2009.5159284
DC Field | Value | |
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dc.title | Realizing steep subthreshold swing with impact ionization transistors | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:49:08Z | |
dc.date.available | 2014-10-07T04:49:08Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Yeo, Y.-C. (2009). Realizing steep subthreshold swing with impact ionization transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 43-44. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2009.5159284 | |
dc.identifier.isbn | 9781424427857 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84128 | |
dc.description.abstract | Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature. Techniques for enhancing impact ionization rate and reducing the breakdown voltage V BD for device performance improvement will be discussed. Challenges faced by I-MOS will be highlighted. Some challenges may be addressed through the strain and materials engineering. Limitations of the I-MOS will also be discussed. ©2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2009.5159284 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/VTSA.2009.5159284 | |
dc.description.sourcetitle | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | |
dc.description.page | 43-44 | |
dc.identifier.isiut | 000272451000019 | |
Appears in Collections: | Staff Publications |
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